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inchange semiconductor product specification silicon npn power transistors 2SD386 2SD386a description ? ?with to-220c package ? high voltage :v cbo =200v(min) applications ? for tv vertical deflection output applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 200 v 2SD386 120 v ceo collector-emitter voltage 2SD386a open base 150 v v ebo emitter-base voltage open collector 6 v 2SD386 3 i c collector current 2SD386a 2 a i cm collector current-peak 10 a t c =25 ?? 25 p c collector dissipation t a =25 ?? 1.75 w t j junction temperature 150 ?? t stg storage temperature -40~150 ??
inchange semiconductor product specification 2 silicon npn power transistors 2SD386 2SD386a characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2SD386 120 v (br)ceo collector-emitter breakdown voltage 2SD386a i c =25ma; i b =0 150 v 2SD386 1.0 v cesat collector-emitter saturation voltage 2SD386a i c =1a; i b =0.1a 1.5 v v besat base-emitter saturation voltage i c =1a; i b =0.1a 1.8 v i cbo collector cut-off current v cb =180v; i e =0 1.0 ma i ebo emitter cut-off current v eb =5v; i c =0 5.0 ma h fe dc current gain i c =0.5a ; v ce =2v 40 320 f t transition frequency i c =0.5a ; v ce =5v 8 mhz ? h fe classifications c d e f 40-80 60-120 100-200 160-320
inchange semiconductor product specification 3 silicon npn power transistors 2SD386 2SD386a package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10mm)

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